Kingston DDR3 1Gb 1333MHz ValueRAM CL9

Kingston DDR3 1Gb 1333MHz ValueRAM CL9
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Caracteristicas y Especificaciones de:

Kingston DDR3 1Gb 1333MHz ValueRAM CL9

Modelo: KVR1333D3N9/1G  Stock: 0

PRODUCTO DESCATALOGADO

DESCRIPTION
This document describes ValueRAM's 128M x 64-bit (1GB)
DDR3-1333 CL9 SDRAM (Synchronous DRAM), 1Rx8 memory
module, based on eight 128M x 8-bit DDR3-1333 FBGA components.
The SPD is programmed to JEDEC standard latency
DDR3-1333 timing of 9-9-9 at 1.5V. This 240-pin DIMM uses
gold contact fingers. The electrical and mechanical specifications
are as follows:

FEATURES
- JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
- VDDQ = 1.5V (1.425V ~ 1.575V)
- 667MHz fCK for 1333Mb/sec/pin
- 8 independent internal bank
- Programmable CAS Latency: 9, 8, 7, 6
- Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
- Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
- Bi-directional Differential Data Strobe
- Internal(self) calibration: Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
- Asynchronous Reset
- PCB: Height 1.18” (30mm), single sided component

SPECIFICATIONS
CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh 110ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 36ns (min.)
Power (Operating) 1.140 W*
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C