Caracteristicas y Especificaciones de:

Kingston DDR3 4Gb 1600Mhz HyperX Blu CL9

Modelo: KHX1600C9D3B1/4G  Stock: +100

Precio de Venta

25.50 €

Portes 24-48 horas

3.99 €

Seguro de transporte e IVA incluidos.

DESCRIPTION
This document describes Kingston's 512M x 64-bit (4GB)
DDR3-1600 CL9 SDRAM (Synchronous DRAM), 2Rx8 memory
module, based on sixteen 256M x 8-bit FBGA components. This
module has been tested to run at DDR3-1600 at a low latency
timing of 9-9-9-27 at 1.65V.The SPD is programmed to JEDEC
standard latency DDR3-1333 timing of 9-9-9. This 240-pin
DIMM uses gold contact fingers. The JEDEC electrical and
mechanical specifications are as follows:
Document No. 4806117-001.A00 06/21/11 Page 1

SPECIFICATIONS
CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh 160ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 36ns (min.)
Power (Operating) 1.800 W*
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C
*Power will vary depending on the SDRAM used.

FEATURES
-  JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
-  VDDQ = 1.5V (1.425V ~ 1.575V)
-  667MHz fCK for 1333Mb/sec/pin
-  8 independent internal bank
-  Programmable CAS Latency: 9, 8, 7, 6
- Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
-  Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
-  8-bit pre-fetch
-  Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
-  Bi-directional Differential Data Strobe
-  Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
-  On Die Termination using ODT pin
-  Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
-  Asynchronous Reset
-  PCB : Height 1.180” (30.00mm), double sided component