Caracteristicas y Especificaciones de:

Kingston DDR3 8Gb 1600MHz HyperX Blu 2X4G CL9

Modelo: KHX1600C9D3B1K2/8GX  Stock: +20

Precio de Venta

50.50 €

Portes 24-48 horas

3.99 €

Seguro de transporte e IVA incluidos.

DESCRIPTION
Kingston's KHX1600C9D3B1K2/8GX is a kit of two 512M x 64-
bit (4GB) DDR3-1600 CL9 SDRAM (Synchronous DRAM), 2Rx8
memory modules, based on sixteen 256M x 8-bit FBGA
components per module. Each module kit supports Intel® XMP
(Extreme Memory Profiles). Total kit capacity is 8GB. Each
module kit has been tested to run at DDR3-1600 at a low
latency timing of 9-9-9-27 at 1.65V. The SPDs are programmed
to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V.
Each 240-pin DIMM uses gold contact fingers and requires
+1.5V. The JEDEC standard electrical and mechanical specifications
are as follows:

SPECIFICATIONS
CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh 160ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 36ns (min.)
Power (Operating) 1.800 W*
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C
*Power will vary depending on the SDRAM used.

FEATURES
- JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
- VDDQ = 1.5V (1.425V ~ 1.575V)
- 667MHz fCK for 1333Mb/sec/pin
- 8 independent internal bank
- Programmable CAS Latency: 9, 8, 7, 6
- Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
- Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
- Bi-directional Differential Data Strobe
- Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
- Asynchronous Reset
- PCB : Height 1.180” (30.00mm), double sided component