Caracteristicas y Especificaciones de:

Kingston SODIMM DDR3 4Gb 1600MHz HyperX Genesis 2X2G CL9

Modelo: KHX1600C9S3K2/4G  Stock: 0

KHX1600C9S3K2/4G
4GB (2GB 256M x 64-Bit x 2 pcs.)
DDR3-1600MHz CL9 204-Pin SODIMM Kit

DESCRIPTION:
Kingston's KHX1600C9S3K2/4G is a kit of two 256M x 64-bit (2GB) DDR3-1600 CL9 SDRAM (Synchronous DRAM) memory modules, based on sixteen 128M x 8-bit DDR3 FBGA components per module. Total kit capacity is 4GB. Each module kit has been tested to run at DDR3-1600 at a low latency timing of 9-9-9 at 1.5V. The SPDs are programmed as specified in the Timing Parameters section. Each 204-pin SODIMM uses gold contact fingers and requires +1.5V. The electrical and mechanical specifications are as follows:

FEATURES:
• JEDEC standard 1.5V ± 0.075V Power Supply
• VDDQ = 1.5V ± 0.075V
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 5,6,7,8,9,10,11
• Posted CAS
• Programmable Additive Latency: 0, CL - 2, or CL - 1
clock
• Programmable CAS Write Latency(CWL) = 8(DDR3-
1600)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential
with starting address “000” only), 4 with tCCD = 4
which does not allow seamless read or write [either
on the fly using A12 or MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration
through ZQ pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE
85°C, 3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB : Height 1.18” (30.00mm) double sided
component
• RoHS Compliant

PERFORMANCE:
• CL(IDD): 9 cycles
• Row Cycle Time (tRCmin): 48.125ns (min.)
• Refresh to Active/Refresh Command Time (tRFCmin): 110ns
• Row Active Time (tRASmin): 33.75ns (min.)
• Power: 1.975 W (operating per module)
• UL Rating: 94 V - 0
• Operating Temperature: 0o C to 85o C
• Storage Temperature: -55o C to +100o C
TIMING PARAMETERS:
• DDR3-1600 CL9-9-9 @1.5V
• DDR3-1333 CL8-8-8 @1.5V
• DDR3-1066 CL6-6-6 @1.5V